the VRF157FL is a gold-metallized silicon n-channel rf power transis- tor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter- modulation distortion. features ? improved ruggedness v (br)dss = 170v ? designed for 2-100mhz operation ? 600w with 21db typical gain @ 30mhz, 50v ? excellent stability & low imd ? common source coniguration ? available in matched pairs ? 70:1 load vswr capability at speciied operating conditions ? nitride passivated ? economical flangeless package ? refractory gold metallization ? high voltage replacement for mrf157 ? rohs compliant symbol parameter VRF157FL(mp) unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 60 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 1350 w t stg storage temperature range -65 to 150 c t j operating junction temperature max 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speciied static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 170 180 v v ds(on) on state drain voltage (i d(on) = 40a, v gs = 10v) 3.0 5.0 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 4.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 4.0 a g fs forward transconductance (v ds = 10v, i d = 20a) 16 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4940 rev h 12-2013 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. d g s s thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.13 c/w r jhs junction to sink thermal resistance (use high eficiency thermal joint compound and planar heat sink surface.) 0.22 VRF157FL VRF157FLmp 50v, 600w, 80mhz downloaded from: http:///
VRF157FL(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 1580 pf c oss output capacitance v ds = 50v 810 c rss reverse transfer capacitance f = 1mhz 65 functional characteristics symbol parameter min typ max unit g ps f = 30mhz, v dd = 50v, i dq = 800ma, p out = 600w 17 21 db d f = 30mhz, v dd = 50v, i dq = 800ma, p out = 600w pep 45 % imd (d3) f1 = 30mhz, f2 = 30.001mhz, v dd = 50v, i dq = 800ma, p out = 600w pep 1 -25 dbc f = 30mhz, v dd = 50v, i dq = 800ma, p out = 600w cw 70:1 vswr - all phase angles, 0.2msec x 20% duty factor no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speciications and information contained herein. 050-4940 rev h 12-2013 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 1 10 100 1 10 100 180 1.0e?11 1.0e?10 1.0e?9 1.0e?8 0.1 25 50 75 100 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (f) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (v) 3.5v 4.5v 2.5v .5v 5.5v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) pd max t j = 125c t c = 75c typical performance curves i dmax 1.5v bvdss line downloaded from: http:///
0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 10 -5 10 -4 10 -3 10 -2 0.1 1 10 050-4940 rev h 12-2013 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 200 400 600 800 1000 1200 0 5 10 15 20 0 200 400 600 800 1000 1200 0 10 20 30 40 50 60 70 80 output power (w pep ) p out , input power (watts pep) figure 6. p out versus p in output power (w pep ) p out , input power (watts pep) figure 7. p out versus p in 50v 40v freq=30mhz freq=65mhz 50v 40v 0.3 d = 0.9 0.7 single pulse 0.5 0.1 0.05 typical performance curves VRF157FL(mp) downloaded from: http:///
30mhz test circuit 050-4940 rev h 12-2013 figure 8. VRF157FL(mp) d2 r10 r1 c3 r12 c7 d.u.t. 22p f t1 c9 l1 l2 c1 4 r14 r15 c8 d.u.t. c1 3 50v outpu t r14 + - c1 0 c1 1 c1 2 t2 bias 36-50v - + r4 r5 r2 r6 r11 r13 d3 c1 r7 r3 d1 c2 r8 c4 r9 3 2 4 5 6 7 13 11 12 10 c1 - 1000pf ceramic c2, c3, c4 -0.1f ceramic disc capacitor c5 - 0.01f ceramic chip capacitor c6, c12 - 0.1f ceramic chip capacitor c7, c8 - two 2200 pf ceramic chip capacitors in parallel c9 - 820pf ceramic chip capacitor c10, c1 1 - 1000pf ceramic chip capacitor c13 - 0.47f ceramic chip capacitor or two smaller values in parallel c14 - unencapsulated mica, 500v two 1000pf units in series, mounted under t2 d1 - in5357a or equivalent d2, d3 - in4148 or equivalent c1 - mc1723 (723) voltage regulator l1, l2 - 15 h connecting wires to r14 and r15, 2.5cm each #20 awg l3 - 10h, 10 turns #12 awg enameled wire on fair-rite products corp. ferrite toroid #5961000401 or equivalent r1, r2 - 1.0k single turn trimpots r3 - 10k single turn trimpot r4 - 470 ohms, 2.0 watts r5 - 10 ohms r6, r12, r13 - 2.0k ohms r7 - 10k ohms r8 - exact value depends on thermistor r9 used (typically 5.0 - 10k) r9 - thermistor, keystone rl1009-5820-97-d1 or equivalent r10, r11 - 100 ohms, 1.0w carbon r14, r15 - emc technology model 5308 or kdi pyrofilm ppr 970-150-3 power resistors, 25 ohms t1, t2 - 9:1 and 1:9 impedance ratio rf transformers figure 9. 2-50mhz 1kw wideband ampliier rf input l3 l1 l2 output c14 c10 c13 c12 c15 c16 l6 c6 c5 c9 c4 c8 c7 c1, c2, c6, c7 arco 465 mica trimmer c3 1800pf atc700b ceramic c4 680pf metal clad 500v mica c5 390pf metal clad 500v mica c8 100pf atc 700e ceramic c9 120pf atc 700e ceramic c10 - c13 .01uf 100v ceramic smt c14 - c16 .1uf 100v ceramic smt 50v vbias c1 c2 c3 c11 r1 r2 r3 l4 l5 downloaded from: http:///
050-4940 rev h 12-2013 VRF157FL(mp) pin 1 - drain pin 2 - source pin 3 - source pin 4 - gate 1.000 .500 .150r .500 .466 .750 1.500 1.250 .300 .200 .250 .250 .005 .040 .125d 1 2 4 3 d s g hazardous material warning the ceramic portion of the device between leads and mounting lange is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. beo substrate weight: 1.934g. percentage of total module weight which is beo: 20%. thermal considerations and package mounting: the rated 1350w power dissipation is only available when the package mounting surface is at 25c and the junction temperature is 200c. the thermal resis- tance between junctions and case mounting surface is 0.13c/w. when installed, an additional thermal im- pedance of 0.09c/w between the package base and the mounting surface is smooth and lat. thermal joint compound must be used to reduce the effects of small surface irregularities. the heatsink should incorporate a copper heat spreader to obtain best results. the lid maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. four 4-40 (m3) screws provide the minimum 125 lb. required mounting force. t=4-6 in-lb. please refer to app note 1810 "mounting instructions for flangeless packages." adding mp at the end of p/n speciies a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. downloaded from: http:///
050-4940 rev h 12-2013 VRF157FL(mp) the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confi- dential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein m ay not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this prod - uct has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purpose, merchantabil ity, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp disclaimer: downloaded from: http:///
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